Flexible Electronics News

Imec Pushes Boundaries of GaN Technology

Looking to collaborate on extended R&D offering, bring GaN-based products to the market.

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By: DAVID SAVASTANO

Editor, Ink World Magazine

Imec is extending its Gallium Nitride-on-Silicon (GaN-on-Si) R&D program, and is now offering joint research on GaN-on-Si 200mm epitaxy and enhancement mode device technology.   The extended R&D initiative includes exploration of novel substrates to improve the quality of the epitaxial layers, new isolation modules to increase the level of integration, and the development of advanced vertical devices. Imec welcomes new partners interested in next generation GaN technologies and compani...

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